Specification Base Material Poly Silicon Growth Method Directional solidification Conduction Type Boron doped, p-type Resistivity (Ohm cm) 0.5 to 2.5 Ohm cm Lifetime (on blocks μsec) typical 8μsec Carbon Concentration (atoms/cm� ≤ 1 x 1018 atoms/cm3 Oxygen 8 1017 ...
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