Our manufacture produce multicrysatillin wafer , Specification Base materiial Poly silicon Growth method Direction solidifaction Conduction Type Boron doped, P type Resistivity 0.2 – 6 ohm Lifetime time( on blocks usec) Typical 2 usec Carbon concentration ≤ 1 × 10 E18 atoms/ cm Oxygen concentration ≤ 8 × 10 E16 atoms/cm Dimensions 156.0× 156.0 mm ±0.5mm Bevel Edge width 1.5±0.5mm Bevel Edge Angel 45 ± 25 Centre thickness 200+ 50/-30um* TTV ≤ 40 um BOW ≤ 40 um Surface Clean and free from visible atains Saw marks <20 um allowed Edge defects No visible knife - edges V—shaped chips None Visible cracks None Holes None